Ferroelectricity has been demonstrated in epitaxial 7%Y-doped HfO2 (0.07YO(1.5)-0.93HfO(2), YHO7) films grown by the RF magnetron sputtering method at room temperature without any subsequent annealing. The x-ray diffraction patterns of such films ...
Tomoya Sato Takanori Kiguchi Toyohiko J. Konno Jun-ichi Kimura Daichi Ichinose Takanori Mimura Hiroshi Funakubo Kiyoshi Uchiyama
Japanese Journal of Applied Physics 58({SL}) 2019年11月
Thin films of BaCe0.8Y0.2O3-delta (BCYO) and SrZr0.8Y0.2O3-delta (SZYO) with a perovskite structure were deposited on (111)Pt//(111)SrTiO3 (STO) single crystal substrates by an RF-magnetron sputtering method. X-ray diffraction revealed that the BC...
Ferroelectricity has been demonstrated in polycrystalline 7%Y-doped HfO2 (YHO7) films with thicknesses ranging from 10 to 930nm, which were grown on (111)Pt/TiOx/SiO2/(001)Si substrates by pulsed laser deposition at room temperature and subsequent...
Japanese Journal of Applied Physics 58({SB}) 2019年4月
The process of forming the ferroelectric orthorhombic phase was investigated for epitaxial 7% Y-doped (YHO7) films using in situ high-temperature X-ray diffraction. Epitaxial YHO7 films were grown on (111) ITO-coated (111)YSZ substrates by pulsed ...
Herein, ferroelastic domain switching from the nonpolar b-axis to the polar c-axis oriented domain in 7%-YO1.5-substituted HfO2 (YHO-7) epitaxial ferroelectric films is demonstrated. Scanning transmission electron microscopy (STEM) indicates that ...
人文科学研究科
理学部