The crystal structure and ferroelectric properties of 12- to 18 nm-thick epitaxial YO1.5-HfO2 films with 5-9% YO1.5 on (111)ITO//(111)YSZ substrates are investigated to clarify the formation mechanism of the ferroelectric phase. The ferroelectric ...
physica status solidi (RRL) – Rapid Research Letters 15(5) 2000589-2000589 2021年5月
The ferroelectric phase transformation from the tetragonal phase to the orthorhombic phase, induced by an electric field, is demonstrated in a 5%YO1.5-doped Hf0.5Zr0.5O2 epitaxial film which is grown on Sn-doped In2O3-covered (111) yttria-stabiliz...
Ashutosh Giri   Ramez Cheaito   John T. Gaskins   Takanori Mimura   Harlan J. Brown-Shaklee   Douglas L. Medlin   Jon F. Ihlefeld   Patrick E. Hopkins   
We experimentally show that the thermal conductance across confined solid-solution crystalline thin films between parent materials does not necessarily lead to an increase in thermal resistances across the thin-film geometries with increasing film...
The transition between the dielectric tetragonal and ferroelectric orthorhombic phases in 7%Y doped HfO2 and Hf0.5Zr0.5O2 films with various orientations and film thicknesses was investigated by high-temperature x-ray diffraction. All films demons...
Japanese Journal of Applied Physics 60(3) 031009-031009 2021年3月
Y-doped HfO2 films with thicknesses of 150-1000 nm were prepared on Pt/TiOx/SiO2/Si substrates by the sputtering method and subsequent heat treatment at 800 degrees C. XRD analysis showed that the films consisted of an almost pure orthorhombic/tet...