Shelby S. Fields   Sean W. Smith   Samantha T. Jaszewski   Takanori Mimura   Diane A. Dickie   Giovanni Esteves   M. David Henry   Steve L. Wolfley   Paul S. Davids   Jon F. Ihlefeld   
JOURNAL OF APPLIED PHYSICS 130(13) 134101-134101 2021年10月
The mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, an...
The crystal structure and ferroelectric properties of 12- to 18 nm-thick epitaxial YO1.5-HfO2 films with 5-9% YO1.5 on (111)ITO//(111)YSZ substrates are investigated to clarify the formation mechanism of the ferroelectric phase. The ferroelectric ...
physica status solidi (RRL) – Rapid Research Letters 15(5) 2000589-2000589 2021年5月
The ferroelectric phase transformation from the tetragonal phase to the orthorhombic phase, induced by an electric field, is demonstrated in a 5%YO1.5-doped Hf0.5Zr0.5O2 epitaxial film which is grown on Sn-doped In2O3-covered (111) yttria-stabiliz...
Ashutosh Giri   Ramez Cheaito   John T. Gaskins   Takanori Mimura   Harlan J. Brown-Shaklee   Douglas L. Medlin   Jon F. Ihlefeld   Patrick E. Hopkins   
We experimentally show that the thermal conductance across confined solid-solution crystalline thin films between parent materials does not necessarily lead to an increase in thermal resistances across the thin-film geometries with increasing film...
The transition between the dielectric tetragonal and ferroelectric orthorhombic phases in 7%Y doped HfO2 and Hf0.5Zr0.5O2 films with various orientations and film thicknesses was investigated by high-temperature x-ray diffraction. All films demons...