Maria Gabriela Sales Shelby Fields Samantha Jaszewski Sean Smith Takanori Mimura Wendy L. Sarney Sina Najmaei Jon F. Ihlefeld Stephen McDonnell
2D MATERIALS 9(1) 015001-015001 2022年1月
Direct integration of transition metal dichalcogenides on a ferroelectric such as hafnium zirconium oxide (HZO) using an industrially scalable technique is important for realizing various ferroelectric-based device architectures. The interface for...
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2100574-2100574 2022年1月
Y-doped HfO2 ferroelectric films of approximate to 1 mu m thick are deposited without heating by a radio frequency magnetron sputtering method. {100}-oriented epitaxial films with orthorhombic phase are grown on (100)ITO//(100)YSZ substrates witho...
Yoshiomi Hiranaga Takanori Mimura Takao Shimizu Hiroshi Funakubo Yasuo Cho
JAPANESE JOURNAL OF APPLIED PHYSICS 60(SF) 2021年11月
Local C-V mapping based on scanning nonlinear dielectric microscopy (SNDM) is a useful tool for characterizing ferroelectric domain dynamics at the nanoscale. In this study, we realized high-precision C-V mapping through an improved measurement sy...
The thickness dependence of the crystal structure in epitaxial (HfxZr1-x)O-2 (x = 0, 0.5, 1) films is demonstrated. X-ray diffraction measurements suggest that the crystal phase changes from the monoclinic to the orthorhombic and tetragonal phases...
Shelby S. Fields Sean W. Smith Samantha T. Jaszewski Takanori Mimura Diane A. Dickie Giovanni Esteves M. David Henry Steve L. Wolfley Paul S. Davids Jon F. Ihlefeld
JOURNAL OF APPLIED PHYSICS 130(13) 134101-134101 2021年10月
The mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, an...
人文科学研究科
理学部