Maria Gabriela Sales   Shelby Fields   Samantha Jaszewski   Sean Smith   Takanori Mimura   Wendy L. Sarney   Sina Najmaei   Jon F. Ihlefeld   Stephen McDonnell   
2D MATERIALS 9(1) 015001-015001 2022年1月
Direct integration of transition metal dichalcogenides on a ferroelectric such as hafnium zirconium oxide (HZO) using an industrially scalable technique is important for realizing various ferroelectric-based device architectures. The interface for...
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2100574-2100574 2022年1月
Y-doped HfO2 ferroelectric films of approximate to 1 mu m thick are deposited without heating by a radio frequency magnetron sputtering method. {100}-oriented epitaxial films with orthorhombic phase are grown on (100)ITO//(100)YSZ substrates witho...
JAPANESE JOURNAL OF APPLIED PHYSICS 60(SF) 2021年11月
Local C-V mapping based on scanning nonlinear dielectric microscopy (SNDM) is a useful tool for characterizing ferroelectric domain dynamics at the nanoscale. In this study, we realized high-precision C-V mapping through an improved measurement sy...
The thickness dependence of the crystal structure in epitaxial (HfxZr1-x)O-2 (x = 0, 0.5, 1) films is demonstrated. X-ray diffraction measurements suggest that the crystal phase changes from the monoclinic to the orthorhombic and tetragonal phases...